The influence of the etching duration on the surface of Ge samples with different thicknesses (0.5, 1.6, and 2.3 mm) on their photomodulation of terahertz radiation with a frequency of f = 130 GHz was investigated. It was shown that pulsed lamp illumination of Ge samples with a thickness of 0.5 mm, chemically etched in a solution of 95 cm³ of 1% KOH and 75 cm³ of 60% H₂O₂ for different durations (3 and 42 min), leads to changes in the transmission of electromagnetic radiation: a decrease after 3 min and an increase after 42 min. In contrast, the etching of Ge samples with thicknesses of 1.6 mm and 2.3 mm results in a decrease in their electromagnetic radiation transmission upon illumination.
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